Gan Zizhao, male, Han nationality, is a native of Xinyi, Guangdong Province. He graduated from Beijing University in 1963.
In the early 1960s, Gan delivered ideal results on the Tunnel Effect in semiconductors and identified the physical mechanism of Ge Tunnel Effect. He contributed to the high-power pneumatic laser development in China during the early 1970s.
During the late 1970s, Gan proposed a physical model for multi-photon dissociation of polyatomic molecule and developed a concept on the coherent propagation of light in semiconductors. Gan also contributed to the advanced research of condensed state physics, including fraction quantum Hall Effect, metal-insulator phase change, polaron in quantum trap of magnetic semiconductor, and impurities in resonance state. He played a considerable role in the research and development of electrical properties of high temperature super conductors.
Gan is an academician of the Chinese Academy of Sciences.
1991— | Academician, Chinese Academy of Sciences | |
Director, Beijing University, Solid State Physics Institute Beijing Municipality | ||
Professor, Beijing University, Physics Department Beijing Municipality | ||
1963 | Graduate, Beijing University, Physics Department Beijing Municipality |