Zou Shichang, male, Han nationality, is a native of Taichang, Jiangsu Province, and was born in Shanghai. He graduated from Jiaotong University in 1952 and received his doctorate from the Moscow Non-Ferrous Metal Institute in 1958.
Zou Shichang presided over national defense through the processing and formation of the first separation membrane and decided on the optimization of technical channels in the 1960s. He systematically studied the interaction of ion beams and solids and the modification, composition, processing and analyses of ion beam materials.
Zou initiated the strengthened annealing effect of ion implantation injuries caused by the CO2 laser back irradiation. He manufactured the 1st 120-gate gallium arsenide gate-array circuit in China and processed the first flash holographic grating by using reaction ion beams. He also researched SOI material and manufactured certain types of SOI circuits. Zou developed ion beam increase deposit technology and synthesized silicon nitride and titanium nitride membranes.
Zou is an academician of the Chinese Academy of Sciences.
1992—1997 | Alternate Member, 14th CPC, Central Committee | |
1991— | Academician, Chinese Academy of Sciences | |
Researcher, Chinese Academy of Sciences, Shanghai Metallurgical Research Institute Shanghai Municipality | ||
1958 | Graduate, Moscow Non-Ferrous Metal Institute Russia, Moscow (Received Assistant Doctorate) | |
1952 | Graduate, Tangshan Jiaotong University, Mining and Metallurgical Department Hebei Province, Tangshan City |