China Vitae

Biography

Chen Xingbi, male, Han nationality, is a native of Pujiang, Zhejiang Province, but was born in Shanghai. He graduated from Tongji University in 1952.

In the late 1950s, Chen took an international lead in using systematic theoretical analysis for the storage time issue of drift transistor. He put forward new basic equations of charge method, mirror image charge equation among uneven media.

Chen has been engaged in the research on theory and structural innovation of semiconductor electric and electronic components since 1980s and theoretically solved the terminal technical problems of plane and non-plane technology in improving p-n junction voltage. Chen invented three new structures of voltage withstand layer and improved the optimized value of comprehensive performance of power components; among them, the new structure of transverse voltage withstand layer which is compatible with conventional CMOS and BiCMOS technology in preparation technology. This discovery valuable in developing power integrated circuit capable of withstanding high voltage.

Chen is an academician of the Chinese Academy of Sciences.