Lin Lanying, female, Han nationality, is a native of Putian, Fujian Province. She graduated from Fujian Union University, and received a doctorate degree from the University of Pennsylvania in the USA in 1955.
Lin has served as researcher at the Semiconductor Research Institute of the Chinese Academy of Sciences. One of the pioneers of semiconductor science in China, she has been devoted to the research of semiconductor material science throughout her career. She was responsible for successfully developing the first monocrystals of the country, such as silicon, indium antimonide, gallium arsenide and gallium phosphide; and laying the foundation for the development of micro-electronics and optoelectronics in China. She was also responsible for R&D of high purity gaseous phase and liquid phase epitaxy materials that reached the advanced level according to international standards. In recent years, Lin also initiated a new field of micro-gravity semiconductor material science. She has won world-renowned achievements in the research of space growth and the property of gallium arsenide crystal. Lin was elected an academician of the Chinese Academy of Sciences in 1980.
|1980—||Academician, Chinese Academy of Sciences|
|Researcher, Chinese Academy of Sciences, Semiconductor Research Institute|
|1955||Graduate, University of Pennsylvania USA, Pennsylvania, Philadelphia (Received Doctorate)|
|1940||Graduate, Fujian Union University Fujian Province|