Li Zhijian, male, Han nationality, is a native of Ningbo, Zhejiang Province. He graduated from Zhejiang University and obtained an assistant doctorate degree from Leningrad University in physics and mathematics.
Li Zhijian was a professor at Tsinghua University. In the research of semiconductor membrane photoconduction and photoelectricity mechanism, Li put forward the electronic grain boundary, based on which he developed a high SNR PbS infrared detector in the early 1950s. In 1959, he developed high pure polysilicon and in the 1960s he engaged in silicon component research. Li's achievements in plane silicon technology and converse piezosilicon high frequency audion promoted related research and production in the country.
After 1977, he was mainly devoted to the research of large-scale and super-large-scale integrated technology and component physics. He successfully led, directed and directly participated in the R&D of super-large-scale integrated circuit chips, such as multiple types of SRAM, 8 bit and 16 bit microprocessors, and EEPROM and 1M Chinese characters ROM. Concurrently, Li developed 3 micron and 1 micron set technology and techniques. He also invented semiconductor high-speed annealing techniques and equipment. His recent research includes system chip integration and microelectronic machine techniques.
Li Zhijian was elected an academician of the Chinese Academy of Sciences in 1991, and was elected to the Third World Academy of Science in 1999.
|1999—||Academician, Third World Academy of Sciences|
|1991—||Academician, Chinese Academy of Sciences|
|Professor, Tsinghua University Beijing Municipality|
|1958||Graduate, St. Petersburg State University Russia, St. Petersburg (Received Physics and Mathematics Assistant Doctorate Degree)|
|1951||Graduate, Zhejiang University, Physics Department Zhejiang Province|